11 parts in Flash Memory ← browse all
| mpn | lcsc | description | package | jlc class | |
|---|---|---|---|---|---|
| GD25Q128ESIGR GigaDevice(兆易创新) | C2928891 | Dual/quad serial flash memory, 2.7V~3.6V, SPI, 128Mbit, 133MHz, standby 14uA, 100,000 cycles, Tpp:500us, tBE:150ms@(32KB) [Flash Memory] | SOP-8-208mil | Extended Part | |
| GD25Q16CTEGR GigaDevice(兆易创新) | C2915647 | GD25Q16CTEGR 2.7V~3.6V SPI Interface:SPI Memory Size:16Mbit Clock Frequency:120MHz Voltage - Supply:2.7V~3.6V Voltage - Supply:2.7V~3.6V Standby Supply Current:1uA Program / Erase Cycles:100,000 Cycles Page Programming Time (Tpp):600us Block Erase Time(tBE):- Data Retention - TDR ( [Flash Memory] | SOP-8 | Extended Part | |
| GD25Q32CTIG GigaDevice(兆易创新) | C3202807 | GD25Q32CTIG 2.7V~3.6V SPI Interface:SPI Memory Size:32Mbit Clock Frequency:133MHz Voltage - Supply:2.7V~3.6V Voltage - Supply:2.7V~3.6V Program / Erase Cycles:100,000 Cycles Operating Temperature:-40℃~+85℃ Operating Temperature:-40℃~+85℃ [Flash Memory] | SOP-8 | Extended Part | |
| GD25Q64CS2GR GigaDevice(兆易创新) | C3202808 | GD25Q64CS2GR 2.7V~3.6V SPI Interface:SPI Memory Size:64Mbit Clock Frequency:120MHz Voltage - Supply:2.7V~3.6V Voltage - Supply:2.7V~3.6V Standby Supply Current:1uA Program / Erase Cycles:100,000 Cycles Page Programming Time (Tpp):600us Block Erase Time(tBE):- Data Retention - TDR ( [Flash Memory] | SOP-8 | Extended Part | |
| MX25L12833FM2I-10G MXIC(旺宏电子) | C701355 | MX25L12833FM2I-10G SPI Interface Type:SPI Memory Size:128Mbit Supply Voltage:2.7V~3.6V Supply Voltage:2.7V~3.6V Operating Temperature:-40℃~+85℃ Operating Temperature:-40℃~+85℃ [Flash Memory] | SOP-8-200mil | Extended Part | |
| W25Q128JVSIQ Winbond(华邦) | C97521 | W25Q128JVSIQ 3V 128Mbit serial flash; dual/quad SPI; 2.7V~3.6V; 133MHz; 1uA standby; 100,000 Cycles; Tpp 3ms; tBE 120ms@(32KB) [Flash Memory] | SOIC-8-208mil | Basic Part | |
| W25Q16JVSNIQ Winbond(华邦) | C2456211 | W25Q16JVSNIQ 3V 16Mbit serial flash; dual/quad SPI; 2.7V~3.6V; 133MHz; 100,000 Cycles; Tpp 400us; tBE 120ms@(32KB); TDR 20 Years [Flash Memory] | SOIC-8 | Extended Part | |
| W25Q256JVFAM Winbond(华邦) | C2827531 | W25Q256JVFAM 2.7V~3.6V SPI Interface:SPI Memory Size:256Mbit Clock Frequency:133MHz Voltage - Supply:2.7V~3.6V Voltage - Supply:2.7V~3.6V Program / Erase Cycles:100,000 Cycles Page Programming Time (Tpp):4ms Data Retention - TDR (Year):20 Years Operating Temperature:-40℃~+105℃ Oper [Flash Memory] | SOIC-16-300mil | Extended Part | |
| W25Q64JVSSIQ Winbond(华邦) | C83140 | W25Q64JVSSIQ 3V 64Mbit serial flash; dual/quad SPI; 2.7V~3.6V; 133MHz; 1uA standby; 100,000 Cycles; Tpp 3ms [Flash Memory] | SOIC-8-208mil | Extended Part | |
— | W25Q64JVSTIQ Winbond(华邦) | C19606588 | W25Q64JVSTIQ 2.7V~3.6V SPI Interface:SPI Memory Size:64Mbit Clock Frequency:133MHz Voltage - Supply:2.7V~3.6V Voltage - Supply:2.7V~3.6V Operating Temperature:-40℃~+85℃ Operating Temperature:-40℃~+85℃ [Flash Memory] | VSOP-8 | Extended Part |
| XT25F128BSSIGT XTX(芯天下) | C558844 | 128Mbit SPI Nor Quad I/O 2.7V~3.6V SPI Interface:SPI Memory Size:128Mbit Clock Frequency:108MHz Voltage - Supply:2.7V~3.6V Voltage - Supply:2.7V~3.6V Standby Supply Current:0.1uA Program / Erase Cycles:100,000 cycles Page Programming Time (Tpp):300us Block Erase Time(tBE):150ms@(32KB) Data Ret [Flash Memory] | SOP-8-208mil | Extended Part |